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| SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS ISSUE 6 - APRIL 1997 PARTMARKING DETAILS BC856A3A BC856BZ3B BC857AZ3E BC857B3F BC857C3G BC858A3J BC858B3K BC858C3L BC859AZ4A BC859B4B BC859CZ4C BC860AZ4E BC860B4F BC860C4GZ COMPLEMENTARY TYPES BC856 BC857 BC858 BC859 BC860 BC846 BC847 BC848 BC849 BC850 BC856 BC858 BC860 BC857 BC859 C B SOT23 E ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BC856 BC857 BC858 BC859 BC860 Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current Base Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER SYMBOL Max Collector Cut-Off Current ICBO Max VCBO VCES VCEO VEBO IC IEM IBM IEM Ptot Tj:Tstg -80 -80 -65 -50 -50 -45 -30 -30 -30 -30 -30 -30 -5 -100 -200 -200 -200 330 -55 to +150 -50 -50 -45 UNIT V V V V mA mA mA mA mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). BC856 BC857 BC858 BC859 BC860 -15 -4 -75 -75 -300 -300 -75 -300 -250 -650 -300 -600 -700 -850 -600 -600 -650 -650 -750 -750 -600 -650 -750 -820 -580 -580 -650 -650 -750 -750 -75 -75 -250 -250 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCE(sat) Typ Max. Typ Max. Typ Max. VBE(sat) Typ Typ UNIT CONDITIONS. nA VCB = -30V VCB = -30V A Tamb=150C mV IC=-10mA, IB=-0.5mA mV IC=-100mA, IB=-5mA mV IC=-10mA* mV mV mV mV IC=-10mA, IB=-0.5mA IC=-100mA, IB=-5mA IC=-2mA VCE=-5V IC=-10mA VCE=-5V Base-Emitter Voltage VBE Min Typ Max Max * Collector-Emitter Saturation Voltage at IC = 10mA for the characteristics going through the operating point IC = 11mA, VCE = 1V at constant base current. BC856 BC858 BC860 PARAMETER Noise Figure BC857 BC859 ELECTRICAL CHARACTERISTICS (Continued) SYMBOL N Typ Max Typ Max Equivalent Noise Voltage Dynamic Group VI Characteristics Group A en Max BC856 BC857 BC858 BC859 BC860 2 10 2 10 2 10 1 4 1.2 4 110 hie Group B Group C Group VI Group A Group B Group C Group VI Group A hre hfe Group B Group C Group VI Group A Group B Group C hoe Min Typ Max Min Typ Max Min Typ Max Min Typ Max Typ Typ Typ Typ Min Typ Max Min Typ Max Min Typ Max Min Typ Max Typ Max Typ Max Typ Max Typ Max 0.4 1.2 2.2 0.4 1.2 2.2 2.5 1.5 2 75 110 150 2.5 1.5 2 75 110 150 20 40 450 600 900 20 40 0.4 1.2 2.2 1.6 2.7 4.5 3.2 4.5 8.5 6 8.7 15 2.5 1.5 2 3 75 110 150 125 220 260 240 330 500 450 600 900 20 40 18 30 30 60 60 110 6 8.7 15 1.5 2 3 UNIT CONDITIONS. dB VCB = -5V, dB IC=-200A, RG=2k, f=1kHz, f=200Hz 1 dB VCB = -5V, 3 dB IC=-200A, RG=2k, f=30Hz to 15kHz at -3dB points 110 nV VCB = -5V, IC=-200A, RG=2k, f=10Hz to 50Hz at -3dB points k k k k k k k k k 6 k 8.7 k 15 k x10-4 1.5 x10-4 2 x10-4 3 x10-4 VCE=-5V Ic=-2mA f=1kHz 1 4 450 600 900 450 600 900 s s s s s s 60 110 60 s 110 s BC856 BC858 BC860 ELECTRICAL CHARACTERISTICS (Continued) PARAMETER Static Group VI Forward Current Ratio Group A SYMBOL hFE Min Typ Max Typ hFE Min Typ Max Typ Typ hFE Min Typ Max Typ hFE Typ. Min Typ Max Typ Typ Typ BC856 BC857 BC858 BC859 BC860 BC857 BC859 75 110 150 90 75 110 150 90 120 120 Group B Group C 200 150 200 270 420 500 800 150 75 110 150 90 125 180 250 120 150 220 290 475 200 270 420 500 800 400 150 4.5 UNIT CONDITIONS. IC=-2mA, VCE=-5V IC=-0.01mA,VCE=-5V IC=-2mA, VCE=-5V IC=-100mA,VCE=-5V IC=-0.01mA,VCE=-5V IC=-2mA, VCE=-5V IC=-100mA,VCE=-5V IC=-0.01mA, VCE=-5V IC=-2mA, VCE=-5V 270 420 500 800 300 270 Transition Frequency Collector-Base Capacitance fT Cobo 420 500 800 IC=-100mA,VCE=-5V 300 MHz IC=-10mA,VCE=-5V f=100MHz VCB=-10V, pF f=1MHz Spice parameter data is available upon request for these devices |
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